Physical and mathematical sciences

Talanin V.I., Talanin I.E. High-temperature precipitation of impurities in metals // Physics Solid State. — 2022. — Vol. 64, N. 6. — P. 340-346.

Using two alternative approaches to describing the defect structure of dislocation-free copper single crystals (the classical theory of the nucleation and growth of particles of the second phase in solids and Vlasov’s model for solids), we demonstrated that high-temperature precipitation of impurities occurs upon cooling of a growing crystal. High-temperature precipitation of impurities can lead …

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Talanin V.I., Talanin I.E. Vlasov’s physics: from plasma to solid // Advanced Aspects of Engineering Research. Vol. 3 / Ed. Yong X. Gan. — London: Book Publ. Int., 2021. — P. 114-119.

The basic principles of Vlasov’s physics are considered from a general point of view. The reliability of his judgments about the application of nonlocal statistical mechanics to real solids is shown. The possibilities of Vlasov’s physics for a reliable description of matter are discussed.

Talanin V.I., Talanin I.E. Complexation in germanium in accordance with Vlasov’s model for solids // J. Cryst. Growth. — 2020. — Vol. 552. — Article 125928.

Using Vlasov’s model for solids, the diffusion model of defect formation in germanium was verified. The possibility of applying Vlasov’s model for solids to describe complexation in dislocation-free germanium single crystals is shown. Vlasov’s model for solids allows one to interpret the processes of defect formation in a crystal from a single viewpoint both at …

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Talanin V.I., Talanin I.E., Matsko O. Simulation of the creation of a defect structure of dislocation-free germanium single crystals // J. Cryst. Growth. — 2020. — Vol. 533. — Article 125472.

The basis for applying the model of high-temperature impurity precipitation is decay of a supersaturated solid solution of point defects near the crystallization front. A necessary condition for high-temperature precipitation is absence of recombination processes of intrinsic point defects (vacancies and intrinsic interstitial atoms, IPDs) at high temperatures. The recombination parameters for dislocation-free germanium single …

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Talanin V.I., Talanin I.E., Matsko O., Yakymchuk D.I. Application Vlasov’s model for solids to the analysis of defect formation // The 7th Annual Conference of ANALYTIX-2019: Abstract Book. — Berlin, 2019. — P. 67.

The authors confirmed the validity of Vlasov’s model for solids using an example of real material. It is shown for the first time that Vlasov’s model for plasma and Vlasov’s model for solids give identical results and are, in fact, an analogue of the concept of the “large-scale structure of the Universe”. It is shown …

Читать далее «Talanin V.I., Talanin I.E., Matsko O., Yakymchuk D.I. Application Vlasov’s model for solids to the analysis of defect formation // The 7th Annual Conference of ANALYTIX-2019: Abstract Book. — Berlin, 2019. — P. 67.»

Talanin V.I., Talanin I.E. High-temperature precipitation of impurities in the framework of Vlasov’s model for solids // Crystallography Reports. 2019. – Vol. 64, N. 4. – P. 2-6.

It is shown that Vlasov’s model for solids describes the processes of complex formation during the growth of real crystals taking into account the thermal growth conditions. Allows in conjunction with the classical theory of nucleation and growth of second-phase particles in solids to calculate the defect structure of crystals, which was formed in the …

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Talanin V.I., Talanin I.E. Complex formation in semiconductor silicon within the framework of the Vlasov model of a solid state // Physics Solid State. – 2016. – Vol. 58, N. 10. – P. 2050-2054.

The formation of silicon–carbon and silicon–oxygen complexes during cooling after the growth of dislocation-free silicon single crystals has been calculated using the Vlasov model of crystal formation. It has been confirmed that the complex formation begins in the vicinity of the crystallization front. It has been shown that the Vlasov model of a solid state …

Читать далее «Talanin V.I., Talanin I.E. Complex formation in semiconductor silicon within the framework of the Vlasov model of a solid state // Physics Solid State. – 2016. – Vol. 58, N. 10. – P. 2050-2054.»

Talanin V.I., Talanin I.E. Diffusion model of the formation of growth microdefects: a new approach to defect formation in crystals (Review) // Physics Solid State. – 2016. – Vol. 58, N. 3. – P. 427-437.

Theoretical studies of defect formation in semiconductor silicon play an important role in the creation of breakthrough ideas for next-generation technologies. A brief comparative analysis of modern theoretical approaches to the description of interaction of point defects and formation of the initial defect structure of dislocation-free silicon single crystals has been carried out. Foundations of …

Читать далее «Talanin V.I., Talanin I.E. Diffusion model of the formation of growth microdefects: a new approach to defect formation in crystals (Review) // Physics Solid State. – 2016. – Vol. 58, N. 3. – P. 427-437.»

Talanin V.I., Talanin I.E. On the problem of the consistency of the high-temperature precipitation model with the classical nucleation theory // Physics Solid State. – 2014. – Vol. 56, N. 10. – P. 2043-2049.

The adequacy of the model of high-temperature precipitation in dislocation-free silicon single crystals to the classical theory of nucleation and growth of second-phase particles in solids has been considered. It has been shown that the introduction and consideration of thermal conditions of crystal growth in the initial equations of the classical nucleation theory make it …

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Talanin V.I., Talanin I.E., Zhdanova V.V., Yakymchuk D.I., Rybalko A.V. The basic principle of calculation & analysis of defective structure of solids // Mechanical Design, Materials & Manufacturing / Ed. S.A. Kale. N.Y.: Nova Sci. Publ., 2019. P. 17-56.

To describe the defective structure of semiconductor silicon, a triad is created: physical plus mathematical models — computational algorithm — program. This solution can be used both in studying the properties of crystals and in industrial production. Such a solution is the basic principle in the study of structural imperfections in any solid. A structural …

Читать далее «Talanin V.I., Talanin I.E., Zhdanova V.V., Yakymchuk D.I., Rybalko A.V. The basic principle of calculation & analysis of defective structure of solids // Mechanical Design, Materials & Manufacturing / Ed. S.A. Kale. N.Y.: Nova Sci. Publ., 2019. P. 17-56.»

Talanin V.I., Talanin I.E. The formation of structural imperfections in semiconductor silicon. – Newcastle: Cambridge Scholars Publ., 2018. – 281 р.

Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, …

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Talanin V.I. (Editor). New Research on Silicon – Structure, Properties, Technology. – Rijeka: InTECH, 2017. – 294 p.

The knowledge of fundamental silicon questions and all aspects of silicon technology give the possibility of improvement both initial silicon material and devices on silicon basis. The articles for this book have been contributed by the very respected researchers in this area and cover the most recent developments and applications of silicon technology and some …

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Talanin V.I., Talanin I.E. Diffusion model of the formation of growth microdefects as applied to the description of defect formation in heat-treated silicon single crystals // Physics of the Solid State. – 2013. – Vol. 55, N. 2. – P. 282-287.

The diffusion model of the formation of grown-in microdefects has been considered as applied to the description of defect formation in heat-treated silicon single crystals. It has been shown that, in the framework of the proposed kinetic model of defect formation, the formation and development of the defect structure during the growth of a crystal …

Читать далее «Talanin V.I., Talanin I.E. Diffusion model of the formation of growth microdefects as applied to the description of defect formation in heat-treated silicon single crystals // Physics of the Solid State. – 2013. – Vol. 55, N. 2. – P. 282-287.»

Talanin V.I., Talanin I.E., Ustimenko N.Ph. Analysis and calculation of the formation of grown-in microdefects in dislocation-free silicon single crystals // Crystallography Reports. – 2012. – Vol. 57, N. 7. – P. 898-902.

The physical model of the formation of grown-in microdefects in dislocation-free Si single crystals has been analyzed. The mathematical models used to describe the processes of defect formation in crystals during their growth are proven to be adequate to the physical model. A technique is proposed to determine and calculate the defect structure in dependence …

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Talanin V.I., Talanin I.E. The diffusion model of grown-in microdefects formation during crystallization of dislocation-free silicon single crystals // Advances in Crystallization Processes / Ed. Y. Mastai. – Rijeka: INTECH Publ., 2012. – P. 611-632.

The main aspects of the diffusion model for the formation of grown-in microdefects in dislocation-free silicon single crystals are presented.

Talanin V.I., Talanin I.E. A kinetic model of the formation and growth of interstitial dislocation loops in dislocation-free silicon single crystals // J. Crystal Growth. – 2012. – Vol. 346, N. 1. – P. 45-49.

A kinetic model of the formation and growth of dislocation loops in course of consequent as-grown crystal’s cooling has been proposed. It demonstrates that dislocation loops are formed following the processes of high-temperature precipitation of background oxygen and carbon impurities during crystal growth. Elastic deformation caused by growing precipitate is released due to the formation …

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Talanin V.I., Talanin I.E. A selective review of the simulation of the defect structure of dislocation-free silicon single crystals // Open Condensed Matter Physics Journal – 2011. – Vol. 4. – P. 8-32.

A brief review of the current state of theoretical description of the formation of the defect structure of dislocation-free silicon single crystals was carried out. Emphasis was placed on a new diffusion model of formation grown-in microdefects. It is shown that the diffusion model can describe the high-temperature precipitation of impurities during the cooling of …

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Talanin V.I., Talanin I.E. Kinetic model of growth and coalescence of oxygen and carbon precipitates during cooling of as-grown silicon crystals // Physics Solid State. – 2011. – Vol. 53, N. 1. – P. 119-126.

A kinetic model of growth and coalescence of oxygen and carbon precipitates has been proposed. This model in combination with the kinetic model of the formation of oxygen and carbon precipitates represents a unified model of precipitation in as-grown dislocation-free silicon single crystals during their cooling in the temperature range from 1683 to 300 K. …

Читать далее «Talanin V.I., Talanin I.E. Kinetic model of growth and coalescence of oxygen and carbon precipitates during cooling of as-grown silicon crystals // Physics Solid State. – 2011. – Vol. 53, N. 1. – P. 119-126.»

Talanin V.I., Talanin I.E., Ustimenko N.Ph. Software for analysis and calculation of grown-in microdefects formation process in dislocation-free silicon single crystals // Materialy Elektronnoi Techniki. – 2010. – N. 4. – P. 62-67. (In Russian)

A software as a virtual experimental instrument for analyzing and calculating the formation of grown-in microdefects in undoped dislocation-free silicon single crystals has been proposed. Using the software and also using growth parameters (crystal growth rate, crystal diameter, temperature gradients, cooling rate), one can calculate the characteristics of the oxygen and carbon precipitation process during …

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Talanin V.I., Talanin I.E. Kinetics of high-temperature precipitation in dislocation-free silicon single crystals // Physics Solid State. – 2010. – Vol. 52, N. 10. – P. 2063-2069.

The defect structure of dislocation-free silicon single crystals has been calculated using the approximate solution of the Fokker–Planck partial differential equations. It has been demonstrated that the precipitation starts to occur near the crystallization front due to the disappearance of excess intrinsic point defects on sinks whose role is played by oxygen and carbon impurities.

Talanin V.I., Talanin I.E. Kinetics of formation of vacancy microvoids and interstitial dislocation loops in dislocation-free silicon single crystals // Physics Solid State. – 2010. – Vol. 52, N. 9. – P. 1880-1886.

The formation of vacancy microvoids and A_microdefects has been calculated according to the model of point defect dynamics in the absence of recombination of intrinsic point defects at high temperatures. It has been assumed that this solution is possible in the case where the precipitation of impurities begins in the vicinity of the crystallization front. …

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Talanin V.I., Talanin I.E. Modelling of the defect structure in dislocation-free silicon single crystals // Crystallography Reports. – 2008. – Vol. 53, N 7. – P. 1124-1132.

A mathematical model of the formation of primary grown-in microdefects on the basis of dissociation diffusion is presented. Cases of “vacancy–oxygen” (V + O) and “carbon–interstitial” (C + I) interaction near the crystallization front are considered for dislocation-free Si single crystals grown by the floating-zone and Czochralski methods. The approximate analytical expressions obtained by setting …

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Talanin V.I., Talanin I.E., Voronin A.A. About the simulation of primary grown-in micro-defects in dislocation-free silicon single crystals formation // Canadian Journal of Physics. – 2007. – Vol. 85, № 12. – Р. 1459-1471.

A mathematical model of primary grown-in microdefects formation is proposed. The model is built on the basis of the dissociative process of diffusion. Here, we study the interaction patterns between oxygen-vacancy (O + V) and carbon-interstitial (C + I) near the crystallization front in dislocation-free silicon monocrystals grown by float-zone and Czochralski methods. As shown …

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Talanin V.I., Talanin I.E. On the recombination of intrinsic point defects in dislocation-free silicon single crystals // Physics Solid State. – 2007. – Vol. 49, N 3. – P. 467-471.

The recombination of intrinsic point defects in dislocation-free silicon single crystals is investigated. It is established experimentally and confirmed by thermodynamic calculations that this process in the vicinity of the crystallization front is hindered by the recombination barrier. The recombination parameters (such as the recombination barrier height, the recombination time, and the recombination factor) for …

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Talanin V.I., Talanin I.E. Mechanism of formation and physical classification of the grown-in microdefects in semiconductor silicon // Defect & Diffusion Forum. – 2004. – Vol. 230-232. – Р. 177-198.

This paper presents the scheme depicting the formation and transformation mechanism of the grown-in microdefects in FZ-Si and CZ-Si crystals as a function of a crystal growth rate. In is established and proved experimentally that concentrations of vacancies and self-interstitials at the crystallization front near the melting point are comparable, recombination of intrinsic point defects …

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Talanin V.I., Talanin I.E. Physical nature of grown-in microdefects in Czochralski-grown silicon and their transformation during various technological effects // Physica Status Solidi (a). – 2003. – Vol. 200, № 2. – Р. 297-306.

Czochralski-grown dislocation-free silicon crystals of 50 and 80 mm in diameter have been extensively studied by techniques of transmission electron microscopy and preferential etching. Crystals were grown at various growth rates, followed by subsequent processing (thermal treatment, ion implantation). The physical nature (positive/negative sign of silicon lattice imperfection) of grown-in microdefects inside and within the …

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Talanin V.I., Talanin I.E., Levinson D.I. Physical model of paths of microdefects nucleation in dislocation-free single crystals float-zone silicon // Crystal Research & Technology. – 2002. – Vol. 37, № 9. – Р. 983-1010.

With the help of selective etching, transmission electron microscopy complex researches of non-doped dislocation-free single crystals of float-zone silicon by a diameter of 30 mm were conducted. The crystals were obtained with various growth rates and were subjected to various kinds of technological effects. Is established that the process of microdefects formation in silicon proceeds …

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Talanin V.I., Talanin I.E., Levinson D.I. Physics of the formation of microdefects in dislocation-free monocrystals of float-zone silicon // Semiconductor Science & Technology. – 2002. – Vol. 17, № 2. – Р. 104-113.

We study non-doped dislocation-free monocrystals of float-zone silicon using transmission electronic microscopy, optical microscopy and x-ray topography. The crystals were obtained with various growth rates (1–9 mm min−1) and were subjected to various kinds of thermal processing. We experimentally determine the temperatures at which microdefects of various types form, and we establish the mechanism of …

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