## The main results of studies of dislocation-free silicon monocrystals grown by methods of float zone and Czochralski:

1) the concepts of primary and secondary grown-in microdefects are introduced;

2) experimentally and theoretically confirmed the absence of recombination of intrinsic point defects at temperatures close to the melting point;

3) the concept was introduced and a mathematical model of high-temperature precipitation was constructed;

4) built mathematical models describing the process of formation of vacancy microvoids and interstitial dislocation loops;

5) diffusion model for the formation of grown-in microdefects was constructed;

6) software was developed for analyzing and calculating the defective structure;

7) the calculation of defective structure in the framework of Vlasov’s model for solids was carried out and it was shown that Vlasov’s model is applicable not only for ideal crystals but also for describing the formation of the defective structure of real crystals.

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