Talanin V.I., Talanin I.E., Ustimenko N.Ph. Software for analysis and calculation of grown-in microdefects formation process in dislocation-free silicon single crystals // Materialy Elektronnoi Techniki. – 2010. – N. 4. – P. 62-67. (In Russian)

A software as a virtual experimental instrument for analyzing and calculating the formation of grown-in microdefects in undoped dislocation-free silicon single crystals has been proposed. Using the software and also using growth parameters (crystal growth rate, crystal diameter, temperature gradients, cooling rate), one can calculate the characteristics of the oxygen and carbon precipitation process during crystal cooling after growing from the crystallization temperature to room temperature. The software allows analyzing and calculating the formation of vacancy microvoids and interstitial dislocation loops.